Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
620 pcs
|
620 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Configuration | |
| Mounting Type | |
| Operating Temperature | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The FYPF2004DNTU is a Schottky diode array manufactured by ON Semiconductor. It contains two Schottky diodes configured as a common cathode pair, housed in a TO-220F-3 full-pack through-hole package. The device is rated for a maximum forward voltage of 670 mV at 20 A and a reverse leakage current of 1 mA at 40 V. It is classified as a fast recovery diode with recovery time less than 500 ns for forward currents above 200 mA. The operating temperature range spans from -40°C to 150°C. The TO-220F-3 full-pack package provides electrical isolation and is suited for through-hole mounting on PCBs. This diode array is typically used in power supply rectification, polarity protection, and DC-DC converter circuits where low forward voltage drop and fast switching are required. As a common cathode pair, the device simplifies circuit layouts by providing two diodes sharing a common cathode connection.
| Qty | Low | High |
|---|---|---|
| 237+ | $1.27 | $1.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum forward voltage is 670 mV at 20 A.
The maximum reverse leakage current is 1 mA at 40 V.
This is a Schottky diode array with 1 pair common cathode configuration.
The operating temperature range is -40°C to 150°C.
It comes in a TO-220-3 Full Pack through-hole package with supplier device package TO-220F-3.
Yes, it has fast recovery with ≤500ns, >200mA (Io).