| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,031 pcs
|
2031 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology |
The FW4604-TL-2W from On Semiconductor is a complementary dual MOSFET consisting of an N-channel and a P-channel enhancement-mode power MOSFET in a single SOIC8 package. It features logic-level gate drive capability with 4.5V drive voltage, making it suitable for low-voltage switching applications.
The N-channel MOSFET has a drain-source voltage rating of 30V, continuous drain current of 6A, and pulse current capability up to 24A (10μs). The P-channel MOSFET is rated at -30V, -4.5A continuous, and -18A pulse. On-state resistance is typically 30mΩ for the N-channel and 50mΩ for the P-channel at 10V gate drive, with maximum values of 39mΩ and 65mΩ respectively. The device also includes protection diodes.
With a total power dissipation of 2.2W when mounted on a ceramic substrate, and operating junction temperature up to 150°C, this MOSFET is designed for efficient power management. Gate charge is 9.1nC typical, enabling fast switching. The device is halogen-free compliant and RoHS3 compliant (unverified).
The FW4604-TL-2W is supplied in a standard SOIC8 package (8-SOIC, 0.154" width) with a tape and reel packing quantity of 2500 pieces per reel. It is suitable for surface mount assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.35 | $1.35 |
| 10+ | $0.85 | $0.85 |
| 100+ | $0.56 | $0.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel MOSFET has a drain-source voltage rating of 30V, and the P-channel has -30V.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature is up to 150°C, and storage temperature range is -55°C to +150°C.
It is listed as RoHS3 compliant, but this is unverified.
The typical on-resistance is 30mΩ at 10V gate drive, with a maximum of 39mΩ.
The N-channel is rated for 6A DC, and the P-channel for -4.5A DC.
N-channel: 1.7V to 2.6V; P-channel: -2.6V to -1.7V.