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FW276-TL-2H FW276-TL-2H is a dual N-Channel MOSFET array from On Semiconductor. It features a 450V drain-source voltage, 700mA continuous current, and 12.1 Ohm on-resistance, in an 8-SOIC surface mount package.
Mfr Part #:

FW276-TL-2H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FW276-TL-2H is a dual N-Channel MOSFET array from On Semiconductor. It features a 450V drain-source voltage, 700mA continuous current, and 12.1 Ohm on-resistance, in an 8-SOIC surface mount package.
Total Stock: 2,953 pcs
$ Price Range: $0.59

FW276-TL-2H Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,953 pcs
2953 pcs On Request 1 On Request On Request 15+ On Request On Request

FW276-TL-2H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs(th) (Max) @ Id

FW276-TL-2H Description

Short technical summary and product information.

The FW276-TL-2H is a dual N-Channel MOSFET array manufactured by On Semiconductor (onsemi). It integrates two independent N-Channel MOSFETs in a single 8-SOIC surface mount package. Each MOSFET is rated for a maximum drain-source voltage of 450V and a continuous drain current of 700mA. The device features a logic level gate, with a maximum gate threshold voltage of 4.5V at 1mA drain current, enabling direct drive from low-voltage logic. The on-resistance is specified at 12.1 Ohm maximum under the condition of 350mA drain current and 10V gate drive.

 

Gate charge is 3.7nC and input capacitance is 55pF, contributing to efficient switching performance. Maximum power dissipation is 1.6W, and the junction temperature can reach up to 150°C. The package is an 8-SOIC (0.154", 3.90mm width) with gull wing leads for surface mount assembly. The supplier device package is 8-SOIC.

 

This dual MOSFET array is suitable for applications requiring high-voltage switching in a compact footprint, such as power management, relay replacement, and telecom power supplies. The logic level gate allows easy interfacing with microcontrollers or other low-voltage control signals.

FW276-TL-2H Quick Information

Product Type: MOSFET Array
Canonical Name: MOSFET 2N-CH 450V 0.7A 8SOIC
Subcategory: Arrays

FW276-TL-2H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FW276-TL-2H Estimated Pricing

Qty Low High
505+ $0.59 $0.59

Estimated market price range - modelled values for guidance only, not live distributor offers.

FW276-TL-2H Features

  • Dual N-channel MOSFET in a single package.
  • Rated for 450V drain-source voltage.
  • Supports 700mA continuous drain current.
  • 12.1 Ohm typical on-resistance at 10V gate drive.
  • Logic level gate threshold enables 5V drive.

FW276-TL-2H Applications

  • Suitable for high-voltage switching applications.
  • Ideal for power management in compact designs.
  • Can be used in relay replacement circuits.
  • Applicable in telecom power supplies.

FW276-TL-2H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the FW276-TL-2H?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the maximum junction temperature?

150°C (TJ) maximum.

Is the FW276-TL-2H RoHS compliant?

Listed as RoHS3 compliant, but this status is unverified.

What is the drain-source voltage rating?

450V maximum.

What is the continuous drain current rating?

700mA maximum.

What is the gate threshold voltage?

Maximum 4.5V at 1mA drain current.

What is the on-resistance?

12.1 Ohm maximum at 350mA and 10V gate drive.

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