| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
7,052 pcs
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7052 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The FT5764M is a Silicon Darlington Transistor Array from Fujitsu Semiconductor, part of the RM-67 series. Each array contains 4 Darlington transistors, suitable for applications requiring boosted IC outputs like motor drives, solenoid drives, and printer head drives.
Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 100V and a maximum collector current (Ic) of 3A. It boasts a high DC current gain (hFE) of typically 6000. The device also includes a fast-recovery diode to absorb fly-back voltage.
Packaged in an RM-67 surface-mount package, this series offers a cost-effective and space-saving alternative to using multiple discrete TO-220 type Darlington transistors. Its design is well-suited for applications demanding high current gain and significant power dissipation capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the FT5764M is 100V.
The maximum collector current (Ic) for the FT5764M is 3A.
The typical DC current gain (hFE) of the FT5764M is 6000.
The FT5764M is available in the RM-67 package.