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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,060 pcs
|
4060 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FSB749 is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring a surface-mount package.
Key electrical specifications include a collector-emitter breakdown voltage of 25 V, a maximum collector current of 3 A, and a transition frequency of 100 MHz. The DC current gain (hFE) is minimum 100 at Ic=1A, Vce=2V, and the saturation voltage is 600 mV maximum at Ib=300mA, Ic=3A.
The device is housed in a TO-236-3 / SC-59 / SOT-23-3 surface-mount package, with a supplier device package of SOT-23-3. It can operate over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 500 mW.
This transistor is suitable for use in low-power switching circuits, signal amplification, and driver stages where PNP polarity is required. The surface-mount package enables compact PCB layouts.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.65 | $0.65 |
| 10+ | $0.40 | $0.40 |
| 4,060+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25 V.
SOT-23-3 (also TO-236-3, SC-59).
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
3 A.
100 MHz.
Minimum 100 at Ic=1A, Vce=2V.