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FSB619 The FSB619 is an NPN bipolar junction transistor from ON Semiconductor. It provides 50V collector-emitter breakdown voltage, 2A collector current, and 500mW power dissipation in an SOT-23-3 surface-mount package.
Mfr Part #:

FSB619

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FSB619 is an NPN bipolar junction transistor from ON Semiconductor. It provides 50V collector-emitter breakdown voltage, 2A collector current, and 500mW power dissipation in an SOT-23-3 surface-mount package.
✓ Total Stock: 460,409 pcs

FSB619 Available from 3 distributors

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Romaks Technologies ✓
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452,000 pcs
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452000 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
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7,152 pcs
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7152 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
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1,257 pcs
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1257 pcs On Request 1 On Request On Request 18+ On Request On Request
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FSB619 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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FSB619 Description

Short technical summary and product information.

The FSB619 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It is manufactured by ON Semiconductor and offered in a compact SOT-23-3 surface-mount package, also known as TO-236-3 or SC-59.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 50V, a collector current rating of 2A, and a power dissipation of 500mW. The device provides a minimum DC current gain (hFE) of 200 at Ic=1A and Vce=2V, with a maximum collector-emitter saturation voltage of 320mV at Ib=50mA and Ic=2A. The transition frequency is 100MHz, making it suitable for moderate-speed switching circuits.

 

The SOT-23-3 package is widely used in space-constrained PCB designs. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited) based on available data. It operates over a junction temperature range of -55°C to 150°C.

FSB619 Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: NPN Bipolar Transistor 50V 2A SOT-23-3
Subcategory: Single Bipolar Transistor

FSB619 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

FSB619 Features

  • NPN bipolar transistor for general purpose switching.
  • 50V collector-emitter breakdown voltage rating.
  • 2A collector current with 500mW dissipation.
  • 100MHz transition frequency for moderate-speed circuits.
  • Available in SOT-23-3 surface-mount package.

FSB619 Applications

  • Use in power management and load switching.
  • Suitable for signal amplification stages.
  • Works in DC-DC converter circuits.
  • Ideal for portable device power switching.

FSB619 FAQs

7 frequently asked questions generated from this part’s specifications.
What package is the FSB619 available in?

The FSB619 is offered in TO-236-3, SC-59, and SOT-23-3 surface-mount packages, with the supplier device package designated as SOT-23-3.

What is the operating temperature range of the FSB619?

The operating junction temperature range is -55°C to 150°C.

Is the FSB619 RoHS compliant?

The FSB619 is marked as RoHS3 Compliant in the available data.

What is the collector-emitter breakdown voltage of the FSB619?

The collector-emitter breakdown voltage is 50 V.

What is the maximum collector current of the FSB619?

The maximum collector current is 2 A.

What is the DC current gain (hFE) of the FSB619?

The minimum DC current gain is 200 at Ic=1A and Vce=2V.

What is the collector-emitter saturation voltage of the FSB619?

The maximum collector-emitter saturation voltage is 320 mV at Ib=50mA and Ic=2A.

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