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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FSB560 is an NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a maximum collector-emitter voltage of 60V, a maximum collector current of 2A, and a maximum power dissipation of 500mW. The DC current gain (hFE) is a minimum of 100 at 500mA collector current and 2V Vce. The typical transition frequency is 75MHz.
The transistor is housed in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59). It operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
The FSB560 is suitable for a variety of low-power switching and linear amplification circuits. Its compact SOT-23-3 package makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.93 | $0.93 |
| 10+ | $0.66 | $0.66 |
| 100+ | $0.41 | $0.41 |
| 500+ | $0.28 | $0.28 |
| 1,000+ | $0.24 | $0.24 |
| 3,000+ | $0.19 | $0.19 |
| 6,000+ | $0.17 | $0.17 |
| 9,000+ | $0.17 | $0.17 |
| 24,000+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
SOT-23-3 (also TO-236-3, SC-59).
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant.
Minimum 100 at 500mA collector current and 2V Vce.
75 MHz typical.
500 mW.