| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,981 pcs
|
1981 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
961 pcs
|
961 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Storage Temperature |
The FS8205 by FORTUNE is a Dual N-Channel Enhancement Mode Power MOSFET. It is specifically designed for applications such as Li-ion battery management.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 20V and a Continuous Drain Current (ID) of up to 6A at 25℃. The on-resistance (RDS(ON)) is low, measuring a maximum of 28 mΩ at VGS = 4.5V and ID = 4A, and a maximum of 37 mΩ at VGS = 2.5V and ID = 3A.
This MOSFET operates within a junction temperature range of -55 to 150℃ and has a storage temperature range of -55 to 150℃. The device is housed in a compact SOT23-6 surface-mount package and is supplied on reels with a standard quantity of 3,000 units.
The FS8205 offers a Gate-Source Voltage (VGS) rating of ±12V and a Pulsed Drain Current (IDM) of up to 25A. Its Total Power Dissipation (PD) is rated at 1W at 25℃.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the FS8205 is 20V.
The maximum on-resistance (RDS(ON)) of the FS8205 at VGS = 4.5V and ID = 4A is 28 mΩ.
The continuous drain current (ID) rating for the FS8205 at TA = 25°C is 6A.
The FS8205 MOSFET is supplied in a SOT23-6 package.
The operating junction temperature range and storage temperature range for the FS8205 are both -55 to 150°C.