| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,650 pcs
|
1650 pcs | On Request | 1 | On Request | On Request | 1844+ | On Request | On Request |
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| Manufacturer Name | |
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| Storage Temperature |
The Infineon FS800R07A2E3 is a HybridPACK™2 IGBT module utilizing Trench/Fieldstop IGBT3 technology. It offers a high blocking voltage capability of 650V and a nominal collector current of 800A, with a peak collector current of 1600A. This module is designed for applications requiring high current density and low switching losses.
Key electrical features include a low inductive design, VCEsat with a positive temperature coefficient, and an operating junction temperature of 150°C. Mechanically, it boasts a 2.5 kV AC 1min insulation strength, a direct-cooled base plate made of copper, and an integrated NTC temperature sensor for thermal management.
Typical applications for the FS800R07A2E3 include automotive applications, hybrid electric vehicles (HEVs), commercial and agricultural vehicles, and motor drives. Its robust construction and advanced IGBT technology make it suitable for demanding power electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) is 650V at 25°C.
The nominal collector current (IC nom) is 800A.
The repetitive peak collector current (ICRM) is 1600A with a pulse duration of 1 ms.
The total power dissipation (Ptot) is 1500W at 25°C case temperature and a maximum junction temperature of 175°C.
The typical gate threshold voltage (VGEth) is 5.8V, measured at 13.0 mA collector current and 25°C.
Yes, it features an integrated NTC temperature sensor.