| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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499 pcs
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499 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas FS30AS-2-T13 is a high-speed switching N-Channel MOSFET. It is designed for applications requiring efficient power control and fast switching characteristics.
Key electrical specifications include a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 30A at 25°C. The on-resistance (Rds(on)) is rated at a maximum of 100mOhm at 15A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 4V maximum at 1mA.
This MOSFET has a power dissipation rating of 35W (Tc) and an input capacitance (Ciss) of 1250pF maximum at 10V drain-source voltage. It operates within a temperature range of -55°C to 150°C.
The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. The component is supplied in bulk packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum gate threshold voltage is 4V.
The drain-source resistance is 100mOhm.
The drain-source voltage rating is 100V.
-55°C to 150°C.
It uses a TO-252-3, DPak package with 2 leads and a tab.