Mfr Part #:

FS150R12KT4

Mfr Name: Infineon

The FS150R12KT4 is a 1200V, 150A IGBT module from Infineon. It features a collector-emitter saturation voltage of 1.75V typical at 25°C and a total power dissipation of 750W.

✓ Total Stock: 3,727 pcs

$ Price Range: $103.07

FS150R12KT4 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	3,667 pcs On Request	3667 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	60 pcs On Request	60 pcs	On Request	1	On Request	On Request	22+23+	On Request	On Request

FS150R12KT4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Infineon

View Similar Products (0)

FS150R12KT4 Description

Short technical summary and product information.

The FS150R12KT4 is an IGBT module manufactured by Infineon, designed for high-power switching applications. It offers a maximum collector-emitter voltage (Vces) of 1200V and a continuous DC collector current (Ic) of 150A under specified conditions. The device can handle repetitive peak currents up to 300A and has a total power dissipation capability of 750W.

Key electrical characteristics include a typical collector-emitter saturation voltage (Vce_sat) of 1.75V at 25°C and 2.05V at 125°C with 150A collector current and 15V gate-emitter voltage. The gate-emitter peak voltage is rated at ±20V. These specifications make the FS150R12KT4 suitable for demanding power conversion systems.

The module is intended for use in motor drives, inverters, UPS systems, and other industrial power electronics where high efficiency and reliability are required. The part number suffix KT4 indicates Infineon's T4 IGBT technology, which offers low switching and conduction losses.

FS150R12KT4 Quick Information

Product Type: IGBT Module

Series: FS150R12KT4

Canonical Name: FS150R12KT4 IGBT Module

Subcategory: N-channel IGBT Module

FS150R12KT4 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FS150R12KT4 Estimated Pricing

Qty	Low	High
1+	$103.07	$103.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

FS150R12KT4 Features

1200V collector-emitter blocking voltage.
150A continuous DC collector current.
300A repetitive peak collector current.
750W total power dissipation.
Low 1.75V saturation voltage typical.

FS150R12KT4 Applications

Used in motor drive inverters.
Ideal for uninterruptible power supplies.
Suitable for welding equipment.
Applied in renewable energy systems.

FS150R12KT4 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage of the FS150R12KT4?

The maximum collector-emitter voltage (Vces) is 1200V at a junction temperature of 25°C.

What is the continuous collector current rating?

The continuous DC collector current (Ic) is 150A at a case temperature of 90°C and maximum junction temperature of 175°C.

What is the total power dissipation of the module?

The maximum total power dissipation (Ptot) is 750W at a case temperature of 25°C and junction temperature up to 175°C.

What is the typical collector-emitter saturation voltage?

The typical saturation voltage is 1.75V at IC=150A, VGE=15V, and junction temperature 25°C, and increases to 2.05V at 125°C.

What is the gate-emitter peak voltage rating?

The maximum gate-emitter peak voltage (Vges) is ±20V.