| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,514 pcs
|
2514 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| SVHC Present |
The Infineon FS100R17N3E4 is an IGBT module designed for power electronic applications. It incorporates trench/fieldstop IGBT4 technology along with an emitter-controlled diode and an integrated NTC thermistor for temperature monitoring.
Key electrical characteristics include a maximum collector-emitter voltage (VCES) of 1700V and a continuous DC collector current (IC nom) of 100A at 100°C case temperature. The module offers a total power dissipation of 600W at 25°C case temperature.
This module is suitable for applications such as motor drives and UPS systems. It features an isolated base plate and utilizes solder contact technology for reliable connections. The EconoPACK™3 housing provides a standard form factor for integration into various designs.
Electrical performance is further defined by a typical collector-emitter saturation voltage (VCEsat) of 1.95V at 100A and 25°C, and a gate threshold voltage (VGEth) of 5.8V typical. Switching characteristics like turn-on delay time and rise time are also specified at various operating temperatures.
| Qty | Low | High |
|---|---|---|
| 1+ | $103.07 | $103.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the FS100R17N3E4 is 1700V.
The continuous DC collector current (IC nom) is 100A at a case temperature of 100°C.
The FS100R17N3E4 uses trench/fieldstop IGBT4 technology.
Yes, the FS100R17N3E4 features an integrated NTC temperature sensor.
The FS100R17N3E4 is supplied in the EconoPACK™3 module package.