| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,040 pcs
|
5040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,472 pcs
|
3472 pcs | On Request | 1 | On Request | On Request | 2001 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQU9N25TU is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for medium-voltage switching applications, with a maximum drain-to-source voltage of 250V and a continuous drain current rating of 7.4A at case temperature. The device uses standard MOSFET (metal oxide) technology and requires a gate drive voltage of 10V to achieve its specified on-resistance.
Key electrical characteristics include a maximum on-resistance of 420mOhm when driven with 10V at a drain current of 3.7A, a maximum gate threshold voltage of 5V at 250µA, and a maximum gate-source voltage of ±30V. The input capacitance is rated at 700pF at 25V drain-source, and the total gate charge is 20nC at 10V gate drive, which helps designers estimate switching performance.
Thermally, the device can dissipate up to 55W at case temperature and 2.5W at ambient temperature, with an operating junction temperature range of -55°C to 150°C. It is housed in a through-hole TO-251-3 (I-PAK) package with short leads, suitable for PCB mounting with standard soldering processes.
This MOSFET is appropriate for power management, DC-DC conversion, and general switching circuits where medium voltage and current handling are required. The through-hole package simplifies prototyping and manual assembly in low-to-medium volume production.
| Qty | Low | High |
|---|---|---|
| 1,039+ | $0.46 | $0.46 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 250V.
The maximum continuous drain current is 7.4A at case temperature (Tc).
The maximum on-resistance (Rds on) is 420mOhm at a drain current of 3.7A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The FQU9N25TU is available in a TO-251-3 short leads, IPak, TO-251AA package with through-hole mounting.
The maximum power dissipation is 55W at case temperature (Tc) and 2.5W at ambient temperature (Ta).
The maximum gate threshold voltage (Vgs(th)) is 5V at a drain current of 250µA.