| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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14,136 pcs
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14136 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQU8P10TU is a P-Channel power MOSFET manufactured by ON Semiconductor. It supports a maximum drain-to-source voltage of 100V and a continuous drain current of 6.6A at a case temperature of 25°C. This device is suited for power switching and load control applications in through-hole PCB designs.
The MOSFET features a maximum on-resistance of 530mΩ at a 10V gate-to-source drive and 3.3A drain current. The maximum gate threshold voltage is 4V at 250µA drain current, and the gate-source voltage rating is ±30V. The device exhibits an input capacitance of 470pF at Vds=25V and a total gate charge of 15nC at Vgs=10V.
Thermal limitations are specified with power dissipation of 2.5W at ambient temperature and 44W at case temperature. The operating junction temperature range is -55°C to 150°C. The part is housed in a TO-251-3 (I-PAK) package with short leads, providing a compact through-hole mounting option.
The product is marked RoHS3 compliant, MSL 1 (unlimited), and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 5,040+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The device is offered in a TO-251-3 (I-PAK) through-hole package, also designated as TO-251AA, with supplier device package I-PAK.
The operating junction temperature range is -55°C to 150°C.
Yes, the FQU8P10TU is marked as RoHS3 compliant.
The continuous drain current is 6.6A at 25°C case temperature.
The maximum on-resistance is 530mΩ at a drain current of 3.3A and gate-to-source voltage of 10V.
The maximum gate charge is 15nC at a gate-to-source voltage of 10V.