| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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777 pcs
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777 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The FQU7N20TU is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications with a drain-source voltage rating of 200V and a continuous drain current of 5.3A at 25°C case temperature. The device features a maximum on-resistance of 690mOhm at a gate drive of 10V and a drain current of 2.65A, ensuring efficient power handling.
Key electrical characteristics include a gate threshold voltage of 5V maximum, a gate charge of 10nC at 10V, and an input capacitance of 400pF at 25V drain-source voltage. The MOSFET can dissipate up to 45W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The FQU7N20TU is housed in a through-hole TO-251-3 package with short leads, also known as IPak or TO-251AA, and the supplier device package is I-PAK. This mounting style is suitable for prototyping and low-volume production where manual soldering or sockets are used.
Note: Compliance data for RoHS, REACH, and MSL is listed but unverified. The datasheet filename associated with this part appears to be for a different model (FQD7N20TF), so verification of specifications is recommended.
| Qty | Low | High |
|---|---|---|
| 343+ | $0.88 | $0.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
TO-251-3 Short Leads, IPak, TO-251AA (I-PAK).
-55°C to 150°C (junction temperature).
The component is listed as RoHS3 compliant, but this status is unverified.
5.3A at 25°C case temperature.
690mOhm at 2.65A drain current and 10V gate-source voltage.
5V at 250µA drain current.