| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,905 pcs
|
3905 pcs | On Request | 1 | On Request | On Request | 2002 | On Request | On Request |
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The FQU6P25TU is a P-Channel enhancement mode power MOSFET manufactured using Fairchild Semiconductor's planar stripe DMOS technology. This device is designed to minimize on-state resistance and provide superior switching performance, making it well suited for high efficiency switching DC/DC converters.
Key electrical specifications include a maximum drain-source voltage of 250V, a continuous drain current of 4.7A at 25°C, and a maximum drain-source on-resistance of 1.1Ω at a gate-source voltage of 10V. The device offers a low typical gate charge of 21 nC and is 100% avalanche tested, with a single pulsed avalanche energy rating of 540 mJ.
The FQU6P25TU is housed in a through-hole I-PAK (TO-251AA) package and has an operating junction temperature range of -55°C to 150°C. It is RoHS3 compliant and has an MSL rating of Level 1.
The maximum drain-source voltage (Vdss) is 250 V.
The continuous drain current is 4.7 A at a case temperature of 25°C and 3.0 A at 100°C.
The maximum drain-source on-resistance (Rds(on)) is 1.1 Ω at a drain current of 2.35 A and a gate-source voltage of 10 V.
The operating junction temperature range is -55°C to 150°C.
It is available in a through-hole I-PAK (TO-251AA) package.
The part is listed as RoHS3 compliant, though this data is unverified.