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FQU5P20TU The FQU5P20TU is a P-Channel MOSFET from On Semiconductor rated for 200V drain-source voltage and 3.7A continuous drain current. It is housed in a through-hole IPAK package.
Mfr Part #:

FQU5P20TU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQU5P20TU is a P-Channel MOSFET from On Semiconductor rated for 200V drain-source voltage and 3.7A continuous drain current. It is housed in a through-hole IPAK package.
✓ Total Stock: 72,602 pcs
$ Price Range: $0.28

FQU5P20TU Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
70,399 pcs
On Request
70399 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
2,203 pcs
On Request
2203 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQU5P20TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQU5P20TU Description

Short technical summary and product information.

The FQU5P20TU is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It uses MOSFET (Metal Oxide) technology and is designed for medium-voltage switching applications.

 

Key electrical characteristics include a drain-to-source voltage (Vdss) of 200V and a continuous drain current of 3.7A (Tc). The device has a maximum drain-source on-resistance of 1.4 Ohms at Vgs = 10V and Id = 1.85A. The gate threshold voltage is 5V maximum at Id = 250µA, and the maximum gate-source voltage is ±30V.

 

For switching performance, the input capacitance (Ciss) is 430 pF maximum at Vds = 25V, and the gate charge (Qg) is 13 nC maximum at Vgs = 10V. The maximum power dissipation is rated at 45W (Tc) and 2.5W (Ta). The operating junction temperature ranges from -55°C to 150°C.

 

The FQU5P20TU is supplied in a TO-251-3 (IPak) through-hole package, suitable for automated or manual assembly on printed circuit boards.

FQU5P20TU Quick Information

Product Type: MOSFET
Canonical Name: FQU5P20TU
Subcategory: Single MOSFETs

FQU5P20TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQU5P20TU Estimated Pricing

Qty Low High
5,040+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQU5P20TU Features

  • 200V drain-source voltage rated P-Channel MOSFET.
  • Continuous drain current of 3.7 Amps.
  • Through-hole IPAK package for robust mounting.
  • 1.4 Ohm maximum on-resistance at 10V gate drive.
  • Wide operating temperature range from -55 to 150°C.

FQU5P20TU Applications

  • Suitable for power management in industrial circuits.
  • Used in DC-DC converters and inverters.
  • Ideal for load switching and power supply applications.

FQU5P20TU FAQs

1 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FQU5P20TU?

The drain-to-source voltage (Vdss) is 200 V.

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