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FQU5N50CTU-WS The FQU5N50CTU-WS is an N-Channel MOSFET from On Semiconductor, rated for 500V drain-source voltage and 4A continuous drain current. It features a low on-resistance of 1.4Ω (max) and low gate charge for efficient switching.
Mfr Part #:

FQU5N50CTU-WS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQU5N50CTU-WS is an N-Channel MOSFET from On Semiconductor, rated for 500V drain-source voltage and 4A continuous drain current. It features a low on-resistance of 1.4Ω (max) and low gate charge for efficient switching.
✓ Total Stock: 5,040 pcs
$ Price Range: $0.40 - $0.50

FQU5N50CTU-WS Available from 1 distributor

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✓ Non-Authorised
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5,040 pcs
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FQU5N50CTU-WS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQU5N50CTU-WS Description

Short technical summary and product information.

The FQU5N50CTU-WS is an N-Channel enhancement mode power MOSFET manufactured using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This device is designed for high-voltage switching applications such as switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

 

Key electrical specifications include a drain-source breakdown voltage of 500V, continuous drain current of 4A at Tc=25°C (2.4A at 100°C), and a maximum static drain-source on-resistance of 1.4Ω at Vgs=10V. The device features low gate charge (typical 18nC) and low reverse transfer capacitance (typical 15pF), enabling fast switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 300mJ.

 

The MOSFET is housed in a TO-251-3 (I-PAK) package with short leads, designed for through-hole mounting. The junction temperature range is -55°C to +150°C, with a maximum power dissipation of 48W at Tc=25°C. The device is RoHS compliant and has a moisture sensitivity level of 1 (unlimited).

FQU5N50CTU-WS Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQU5N50CTU-WS N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQU5N50CTU-WS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQU5N50CTU-WS Estimated Pricing

Qty Low High
1,500+ $0.40 $0.40
5,040+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQU5N50CTU-WS Features

  • 500V drain-source breakdown voltage.
  • 4A continuous drain current at 25°C.
  • Low on-resistance of 1.4Ω (max).
  • Low gate charge (typical 18nC).
  • 100% avalanche tested.

FQU5N50CTU-WS Applications

  • Used in switched mode power supplies.
  • Ideal for active power factor correction.
  • Suitable for electronic lamp ballasts.
  • High-voltage switching applications.

FQU5N50CTU-WS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the FQU5N50CTU-WS?

TO-251-3 (I-PAK) with short leads, through-hole mounting.

What is the operating temperature range?

-55°C to +150°C (junction).

Is the FQU5N50CTU-WS RoHS compliant?

Based on available data, the device is listed as RoHS3 compliant, but this status is unverified.

What is the drain-source voltage rating?

500V.

What is the continuous drain current rating?

4A at Tc=25°C, 2.4A at Tc=100°C.

What is the on-resistance of the MOSFET?

1.14Ω typical, 1.4Ω maximum at Vgs=10V, Id=2A.

What is the gate charge?

18nC typical, 24nC maximum at Vgs=10V.

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