| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45,360 pcs
|
45360 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQU4N50TU-WS is an N-Channel power MOSFET manufactured by On Semiconductor. It features a drain-source breakdown voltage of 500V and a maximum continuous drain current of 2.6A at Tc=25°C. The device has a maximum on-resistance of 2.7Ω at Id=1.3A and Vgs=10V.
This MOSFET offers a typical gate charge of 13nC at Vgs=10V and an input capacitance of 460pF at Vds=25V. It supports a gate-source voltage range of ±30V and has a gate threshold voltage of 5V at Id=250µA. Maximum power dissipation is 2.5W at ambient temperature and 45W at case temperature.
The device is designed for through-hole mounting and is supplied in the TO-251-3 Short Leads (IPak / TO-251AA) package. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1,120+ | $0.52 | $0.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FQU4N50TU-WS has a minimum drain-source breakdown voltage of 500 V.
The maximum continuous drain current is 2.6 A at a case temperature of 25°C.
The maximum on-resistance is 2.7 ohms at a drain current of 1.3A and a gate-source voltage of 10V.
It is available in a through-hole TO-251-3 Short Leads (IPak / TO-251AA) package. The supplier device package is I-PAK.