| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
307,440 pcs
|
307440 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQU2N60CTU is an N-Channel enhancement mode power MOSFET manufactured by onsemi using their proprietary planar stripe and DMOS technology. It is designed to reduce on-state resistance and provide superior switching performance with high avalanche energy strength.
Key electrical specifications include a drain-source breakdown voltage of 600V, continuous drain current of 1.9A at 25°C case temperature, and a maximum on-resistance of 4.7Ω at 10V gate drive. The device offers low gate charge (typical 8.5 nC) and low reverse transfer capacitance (typical 4.3 pF), enabling efficient high-frequency switching.
The MOSFET is housed in a TO-251-3 (IPAK) through-hole package, suitable for automated assembly. It is rated for junction temperatures from -55°C to 150°C and has a maximum power dissipation of 44W at case temperature 25°C. The device is 100% avalanche tested and supports single pulse avalanche energy up to 120 mJ.
Typical applications include switched mode power supplies (SMPS), active power factor correction (PFC) circuits, and electronic lamp ballasts. The FQU2N60CTU is RoHS3 compliant and Halogen Free.
| Qty | Low | High |
|---|---|---|
| 5,040+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V maximum.
TO-251-3 Short Leads, IPak, TO-251AA (through-hole).
-55°C to 150°C junction temperature.
Yes, it is RoHS3 compliant and Halogen Free.
Typical gate charge is 8.5 nC at 10V gate-source voltage.
120 mJ.