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FQU2N50BTU-WS N-Channel MOSFET with 500V drain-source voltage and 1.6A drain current. Through-hole IPAK package.
Mfr Part #:

FQU2N50BTU-WS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 500V drain-source voltage and 1.6A drain current. Through-hole IPAK package.
✓ Total Stock: 5,040 pcs
$ Price Range: $0.26 - $0.34

FQU2N50BTU-WS Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
5,040 pcs
On Request
5040 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQU2N50BTU-WS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQU2N50BTU-WS Description

Short technical summary and product information.

The FQU2N50BTU-WS is an N-Channel MOSFET from onsemi, designed for high-voltage switching applications. It features a drain-to-source voltage of 500V and a continuous drain current of 1.6A at case temperature. The device offers a maximum on-resistance of 5.3 ohms at 800mA and 10V gate drive, with a gate threshold voltage of 3.7V maximum.

 

This MOSFET is housed in a through-hole TO-251-3 (IPAK) package, suitable for PCB mounting. It operates over a junction temperature range of -55°C to 150°C, with power dissipation rated at 2.5W at ambient temperature and 30W at case temperature. The gate-source voltage is rated at ±30V, and the device has a gate charge of 8nC at 10V.

 

Typical applications include power supply circuits, DC-DC converters, and motor control. The low gate charge and input capacitance of 230pF enable efficient switching in moderate-frequency designs. The through-hole package simplifies thermal management and manual assembly.

FQU2N50BTU-WS Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: N-Channel MOSFET, 500V, 1.6A, IPAK
Subcategory: Single MOSFET

FQU2N50BTU-WS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQU2N50BTU-WS Estimated Pricing

Qty Low High
2,175+ $0.26 $0.26
5,040+ $0.34 $0.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQU2N50BTU-WS Features

  • N-Channel MOSFET with 500V rating.
  • 1.6A continuous drain current.
  • 5.3 ohm maximum on-resistance.
  • Through-hole IPAK package.
  • Operates from -55°C to 150°C.

FQU2N50BTU-WS Applications

  • Ideal for high-voltage power switching.
  • Used in DC-DC converter circuits.
  • Suitable for motor control applications.
  • Works in power supply designs.

FQU2N50BTU-WS FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FQU2N50BTU-WS?

The drain-to-source voltage (Vdss) is 500V.

What is the maximum drain current of the FQU2N50BTU-WS?

The maximum drain current is 1.6A at case temperature (Tc).

What is the package type of the FQU2N50BTU-WS?

The package is TO-251-3 Short Leads, IPak, TO-251AA, with a supplier device package of I-PAK.

What is the operating temperature range of the FQU2N50BTU-WS?

The operating temperature range is -55°C to 150°C (junction temperature).

Is the FQU2N50BTU-WS RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

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