| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,475 pcs
|
4475 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQU2N50BTU is a 500V N-Channel enhancement mode power MOSFET from On Semiconductor. It features a drain-source voltage of 500V and continuous drain current of 1.6A at 25°C (1.0A at 100°C). The device has a low on-resistance of 5.3 Ohms at Vgs=10V and Id=800mA. This MOSFET is designed for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. It comes in a through-hole IPAK (TO-251) package, suitable for PCB mounting. Key features include low gate charge (typical 6.0 nC), fast switching, and 100% avalanche tested. The operating junction temperature range is -55°C to 150°C. The device is RoHS3 compliant (unverified) and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 505+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 500V.
The continuous drain current is 1.6A at Tc=25°C and 1.0A at Tc=100°C.
The maximum on-resistance is 5.3 Ohms at Vgs=10V and Id=800mA.
The device is packaged in a through-hole IPAK (TO-251) package.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 compliant, but this status is unverified.
The maximum gate threshold voltage is 3.7V at Id=250µA.