| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
104,335 pcs
|
104335 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQU20N06LTU is an N-Channel MOSFET from ON Semiconductor. It features a maximum drain-source voltage of 60 V and a continuous drain current of 17.2 A at 25°C case temperature. The device has a low on-resistance of 60 mΩ at 8.6 A and 10 V gate drive, making it suitable for efficient switching. It is packaged in a TO-251-3 (IPAK) through-hole package, which provides good thermal performance. The maximum power dissipation is 38 W at Tc=25°C and 2.5 W at Ta=25°C. The operating junction temperature range is -55°C to 150°C. The gate threshold voltage is typically 2.5 V at 250 µA, and the gate-source voltage can be up to ±20 V. The input capacitance is 630 pF at 25 V drain-source voltage, and the total gate charge is 13 nC at 5 V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
| 70+ | $0.58 | $0.58 |
| 140+ | $0.52 | $0.52 |
| 900+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
17.2 A at 25°C case temperature.
60 mΩ at 8.6 A and 10 V gate drive.
-55°C to 150°C (junction).
TO-251-3 Short Leads, IPak, TO-251AA (through-hole).
RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
Maximum 2.5 V at 250 µA.