DistyParts Icon
FQU1N80TU N-Channel MOSFET with 800V drain-source voltage and 1A continuous drain current. Features 20 Ohm on-resistance at 10V gate drive and is housed in a through-hole TO-251 (I-PAK) package.
Mfr Part #:

FQU1N80TU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 800V drain-source voltage and 1A continuous drain current. Features 20 Ohm on-resistance at 10V gate drive and is housed in a through-hole TO-251 (I-PAK) package.
✓ Total Stock: 3,772 pcs
$ Price Range: $0.30

FQU1N80TU Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
3,772 pcs
On Request
3772 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQU1N80TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FQU1N80TU Description

Short technical summary and product information.

This is an N-Channel MOSFET from On Semiconductor, part number FQU1N80TU. It is designed for high-voltage switching applications with a drain-source voltage rating of 800V and continuous drain current of 1A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 20 Ohms at 500mA drain current and 10V gate drive. The gate threshold voltage is 5V maximum at 250µA. Input capacitance is 195 pF at 25V drain-source. Maximum gate charge is 7.2 nC at 10V.

 

The device is through-hole mounted in a TO-251-3 (I-PAK) package. It can dissipate up to 45W at case temperature and operates over a junction temperature range of -55°C to 150°C.

 

This MOSFET is suitable for applications requiring high voltage blocking with moderate current handling. The low gate charge enables efficient switching in power supply and converter circuits.

FQU1N80TU Quick Information

Product Type: N-Channel MOSFET
Series: QFET
Canonical Name: FQU1N80TU N-Channel MOSFET, 800V, 1A, TO-251 (I-PAK)
Subcategory: N-Channel MOSFET

FQU1N80TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQU1N80TU Estimated Pricing

Qty Low High
3,772+ $0.30 $0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQU1N80TU Features

  • N-Channel MOSFET with 800V drain-source voltage.
  • Continuous drain current rating of 1A.
  • Maximum on-resistance of 20 Ohms.
  • Through-hole TO-251 (I-PAK) package.
  • Operating temperature range -55°C to 150°C.

FQU1N80TU Applications

  • High-voltage switching power supply circuits.
  • AC-DC converter primary side switching.
  • Motor control and inverter applications.
  • General purpose high-voltage switching.

FQU1N80TU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQU1N80TU?

800V.

What package does the FQU1N80TU come in?

TO-251-3 Short Leads, IPak, TO-251AA (through-hole).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FQU1N80TU RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate threshold voltage?

5V maximum at 250µA drain current.

Home
Account

Categories