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FQU1N60CTU The FQU1N60CTU is a 600V, 1A N-Channel MOSFET from On Semiconductor in an IPAK package. It features a maximum on-resistance of 11.5 Ohm and 28W power dissipation.
Mfr Part #:

FQU1N60CTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQU1N60CTU is a 600V, 1A N-Channel MOSFET from On Semiconductor in an IPAK package. It features a maximum on-resistance of 11.5 Ohm and 28W power dissipation.
✓ Total Stock: 26,584 pcs
$ Price Range: $0.18

FQU1N60CTU Available from 1 distributor

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26,584 pcs
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FQU1N60CTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQU1N60CTU Description

Short technical summary and product information.

The FQU1N60CTU is an N-Channel enhancement mode MOSFET designed for high voltage switching applications. Manufactured by ON Semiconductor, this device offers a drain-source voltage rating of 600V and a continuous drain current of 1A. The maximum drain-source on-resistance is 11.5 Ohm at Vgs=10V and Id=500mA, ensuring efficient power management.

 

This MOSFET is housed in a through-hole IPAK (TO-251) package, suitable for automated assembly and manual soldering. It can dissipate up to 28W at the case temperature, making it appropriate for moderate power applications. The device operates over a junction temperature range of -55°C to +150°C.

 

Typical applications include power supply circuits, DC-DC converters, motor control, and general purpose switching. The gate threshold voltage is 4V maximum, allowing drive from standard logic levels. The input capacitance is 170 pF at Vds=25V, and total gate charge is 6.2 nC at Vgs=10V.

FQU1N60CTU Quick Information

Product Type: MOSFET
Canonical Name: FQU1N60CTU N-Channel MOSFET, 600V, 1A, IPAK
Subcategory: Single MOSFET

FQU1N60CTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQU1N60CTU Estimated Pricing

Qty Low High
2,320+ $0.18 $0.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQU1N60CTU Features

  • 600V drain-source voltage rating.
  • 1A continuous drain current capability.
  • 11.5 Ohm maximum on-resistance.
  • 28W power dissipation at case.
  • Through-hole IPAK package mounting.

FQU1N60CTU Applications

  • High voltage DC-DC converter circuits.
  • Power supply switching applications.
  • Motor control and drive systems.
  • General purpose power switching.

FQU1N60CTU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQU1N60CTU?

The maximum drain-source voltage (Vdss) is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current is 1A at case temperature.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance is 11.5 Ohm at Vgs=10V and Id=500mA.

What package is the FQU1N60CTU available in?

It is available in a through-hole IPAK (TO-251) package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FQU1N60CTU RoHS compliant?

The RoHS status is listed as compliant, but this is unverified.

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