| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,040 pcs
|
5040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQU17P06TU is a P-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It is designed for medium-power switching applications requiring a 60V drain-source breakdown voltage and 12A continuous drain current. The device features a maximum on-resistance of 135mΩ at Vgs = 10V, ensuring low conduction losses.
This MOSFET offers a gate charge of 27nC and input capacitance of 900pF, enabling efficient switching at moderate frequencies. The operating junction temperature range spans -55°C to +150°C, suitable for industrial and automotive environments. Maximum power dissipation is rated at 44W at case temperature 25°C and 2.5W at ambient temperature 25°C.
The FQU17P06TU is supplied in the through-hole IPAK (TO-251) package with short leads, allowing easy mounting on PCBs. The P-Channel polarity simplifies drive circuitry in high-side switch configurations. Typical applications include load switching, power management, and DC-DC converter circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
| 70+ | $0.75 | $0.75 |
| 140+ | $0.67 | $0.67 |
| 560+ | $0.55 | $0.55 |
| 1,050+ | $0.51 | $0.51 |
| 2,030+ | $0.47 | $0.47 |
| 5,040+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 60V.
The continuous drain current (Id) is 12A at case temperature Tc.
The maximum on-resistance (Rds(on)) is 135mΩ at Vgs=10V and Id=6A.
It comes in a through-hole IPAK (TO-251) package with short leads.
The operating junction temperature range is -55°C to +150°C.
The maximum gate charge (Qg) is 27nC at Vgs=10V.
The maximum input capacitance (Ciss) is 900pF at Vds=25V.