| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,778 pcs
|
20778 pcs | On Request | 1 | On Request | On Request | 21+15+ | On Request | On Request | |
|
5,040 pcs
|
5040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQU13N10LTU is an N-Channel power MOSFET from ON Semiconductor, designed for medium-voltage switching applications. It offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 10A at Tc. The device features a low maximum on-resistance of 180mOhm at 5A and 10V gate drive, ensuring efficient conduction.
This MOSFET incorporates standard gate drive logic with a threshold voltage of 2V at 250µA, making it compatible with 5V and 10V drive signals. The gate charge is 12nC at 5V, and input capacitance is 520pF at 25V, enabling moderate switching speeds suitable for power management and DC-DC converter circuits.
Packaged in the through-hole I-PAK (TO-251-3) case, the device is easy to mount and suitable for moderate power dissipation up to 40W at Tc. The operating junction temperature range is -55°C to 150°C, allowing use in a wide variety of environments.
The part is marked RoHS3 compliant and REACH unaffected, though these claims are unverified. It is intended for general-purpose low-to-medium power switching applications.
| Qty | Low | High |
|---|---|---|
| 5,040+ | $1.27 | $1.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 100V.
The maximum drain current (Id) is 10A at case temperature (Tc).
It is supplied in a through-hole I-PAK package, also known as TO-251-3 (IPak, TO-251AA).
The junction temperature range is -55°C to 150°C.
It is marked as RoHS3 Compliant, but this is unverified and low confidence.
The maximum on-resistance (Rds(on)) is 180mOhm at 5A drain current and 10V gate voltage.
The maximum gate threshold voltage (Vgs(th)) is 2V at 250µA drain current.