FQU13N06LTU-WS N-Channel MOSFET with 60V drain-source voltage and 11A drain current. Housed in a through-hole TO-251 (I-PAK) package with 115mΩ on-resistance.
Mfr Part #:

FQU13N06LTU-WS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 60V drain-source voltage and 11A drain current. Housed in a through-hole TO-251 (I-PAK) package with 115mΩ on-resistance.
✓ Total Stock: 10,080 pcs
$ Price Range: $0.41 - $1.60

FQU13N06LTU-WS Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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10,080 pcs
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FQU13N06LTU-WS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQU13N06LTU-WS Description

Short technical summary and product information.

The FQU13N06LTU-WS is an N-channel MOSFET from ON Semiconductor, built using MOSFET (Metal Oxide) technology. It is rated for a maximum drain-to-source voltage of 60 V and a continuous drain current of 11 A at case temperature.

 

Electrical characteristics include a maximum drain-source on-resistance of 115 mΩ at a gate-to-source voltage of 10 V and drain current of 5.5 A. The gate charge is 6.4 nC at Vgs = 5 V, and the input capacitance is 350 pF at Vds = 25 V. The maximum gate threshold voltage is 2.5 V at 250 µA, while the gate drive voltage can be 5 V or 10 V, and the maximum gate-source voltage is ±20 V.

 

The device operates over a junction temperature range of -55°C to 150°C. Power dissipation is rated at 2.5 W at ambient temperature and 28 W at case temperature. It is available in a TO-251-3 (I-PAK) through-hole package, which simplifies board assembly in low-profile power applications.

 

Given its voltage, current, and on-resistance ratings, the FQU13N06LTU-WS is suitable for power switching, DC-DC converter, and low-voltage motor control circuits.

FQU13N06LTU-WS Quick Information

Product Type: MOSFET Transistor
Canonical Name: N-Channel MOSFET, 60V, 11A, TO-251 I-PAK
Subcategory: Single MOSFET

FQU13N06LTU-WS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQU13N06LTU-WS Estimated Pricing

Qty Low High
1+ $1.60 $1.60
70+ $0.72 $0.72
140+ $0.64 $0.64
560+ $0.53 $0.53
1,050+ $0.49 $0.49
2,030+ $0.45 $0.45
5,040+ $0.41 $0.41

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQU13N06LTU-WS Features

  • N-channel MOSFET with 60V drain-source voltage.
  • 11A continuous drain current at case temperature.
  • Low 115mΩ on-resistance at 10V gate drive.
  • The TO-251 I-PAK through-hole package.
  • Operates from -55°C to 150°C junction.

FQU13N06LTU-WS Applications

  • Suitable for power supply switching circuits.
  • Used in DC-DC converter designs.
  • Fits low-voltage motor control applications.

FQU13N06LTU-WS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FQU13N06LTU-WS?

The maximum drain-to-source voltage (Vdss) is 60 V.

What package is the FQU13N06LTU-WS available in?

It is available in a TO-251-3 (I-PAK) through-hole package.

What is the operating temperature range of the FQU13N06LTU-WS?

The operating junction temperature range is -55°C to 150°C.

Is the FQU13N06LTU-WS RoHS compliant?

It is listed as RoHS3 compliant in the existing database, but this has not been independently verified.

What is the maximum continuous drain current of the FQU13N06LTU-WS?

The maximum continuous drain current is 11 A at case temperature.

What is the drain-source on-resistance of the FQU13N06LTU-WS?

The maximum drain-source on-resistance is 115 mΩ at Id = 5.5 A and Vgs = 10 V.

What is the gate charge of the FQU13N06LTU-WS?

The total gate charge is 6.4 nC at Vgs = 5 V.

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