FQU13N06LTU FQU13N06LTU is an N-Channel MOSFET from On Semiconductor with a 60V drain-source voltage rating and 11A continuous drain current. It is housed in a through-hole IPAK (TO-251) package.
Mfr Part #:

FQU13N06LTU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQU13N06LTU is an N-Channel MOSFET from On Semiconductor with a 60V drain-source voltage rating and 11A continuous drain current. It is housed in a through-hole IPAK (TO-251) package.
✓ Total Stock: 24,520 pcs
$ Price Range: $0.36

FQU13N06LTU Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
14,670 pcs
14670 pcs On Request 1 On Request On Request 07+ On Request On Request
Non-Authorised Inventory information
9,850 pcs
9850 pcs On Request 1 On Request On Request On Request On Request On Request

FQU13N06LTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQU13N06LTU Description

Short technical summary and product information.

The FQU13N06LTU is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring a drain-source voltage of up to 60V and a continuous drain current of 11A at case temperature.

 

Key electrical characteristics include a maximum drain-source on-resistance of 115 mOhm at Vgs=10V and Id=5.5A, a typical gate threshold voltage of 2.5V at Id=250µA, and an input capacitance of 350 pF at Vds=25V. The device supports gate drive voltages of 5V and 10V.

 

The MOSFET is offered in a through-hole IPAK (TO-251-3 Short Leads) package, also known as I-PAK, which is suitable for automated insertion and manual soldering. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at ambient temperature and 28W at case temperature.

FQU13N06LTU Quick Information

Product Type: MOSFET
Canonical Name: FQU13N06LTU N-Channel MOSFET 60V 11A IPAK
Subcategory: Single MOSFET

FQU13N06LTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQU13N06LTU Estimated Pricing

Qty Low High
5,040+ $0.36 $0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQU13N06LTU Features

  • N-Channel MOSFET rated for 60V drain-source.
  • Continuous drain current of 11A at case temperature.
  • Low on-resistance of 115 mOhm at 10V gate drive.
  • Through-hole IPAK (TO-251) package for easy mounting.
  • Wide operating junction temperature range -55°C to 150°C.

FQU13N06LTU Applications

  • Used in DC-DC converter and power supply circuits.
  • Suitable for motor control and load switching.
  • Ideal for battery management and protection systems.
  • Applied in general-purpose switching and amplification.

FQU13N06LTU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQU13N06LTU?

The maximum drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating of the FQU13N06LTU?

The continuous drain current is 11A at case temperature.

What is the on-resistance of the FQU13N06LTU?

The maximum drain-source on-resistance is 115 mOhm at Vgs=10V and Id=5.5A.

What package does the FQU13N06LTU come in?

It comes in a through-hole IPAK (TO-251-3 Short Leads) package, also known as I-PAK.

What is the operating temperature range of the FQU13N06LTU?

The operating junction temperature range is -55°C to 150°C.

Is the FQU13N06LTU RoHS compliant?

The part is marked as RoHS3 Compliant, but this is unverified.

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