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FQT7N10TF The FQT7N10TF is a 100V, 1.7A N-Channel power MOSFET from On Semiconductor in a surface-mount SOT-223-4 package.
Mfr Part #:

FQT7N10TF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQT7N10TF is a 100V, 1.7A N-Channel power MOSFET from On Semiconductor in a surface-mount SOT-223-4 package.
Total Stock: 4,000 pcs

FQT7N10TF Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 21+ On Request On Request

FQT7N10TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQT7N10TF Description

Short technical summary and product information.

The FQT7N10TF is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) rating of 1.7A at case temperature (Tc). The device offers a maximum on-resistance (Rds(on)) of 350 mOhm at a gate drive of 10V and 850mA drain current.

 

This MOSFET is designed for general-purpose switching applications requiring efficient power management. It is housed in a surface-mount TO-261-4 (SOT-223-4) package, which is suitable for automated assembly processes. The device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2W at case temperature.

 

Key electrical characteristics include a typical gate threshold voltage of 4V maximum at 250µA drain current, a maximum gate charge of 7.5 nC at 10V gate-source voltage, and an input capacitance of 250 pF at 25V drain-source bias. The maximum allowable gate-source voltage is ±25V.

FQT7N10TF Quick Information

Product Type: Single N-Channel Power MOSFET
Series: QFET
Canonical Name: FQT7N10TF N-Channel Power MOSFET
Subcategory: Single N-Channel MOSFET

FQT7N10TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FQT7N10TF Features

  • N-Channel MOSFET rated for 100V drain-source voltage.
  • Continuous drain current of 1.7A at case temperature.
  • Low on-resistance of 350 mOhm at 10V gate drive.
  • Surface-mount SOT-223-4 package for automated assembly.
  • Wide operating junction temperature range -55°C to 150°C.

FQT7N10TF Applications

  • Suitable for DC-DC converter and power management circuits.
  • Used in load switching and low-power motor control.
  • Ideal for general-purpose switching applications.

FQT7N10TF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQT7N10TF?

The maximum drain-to-source voltage (Vdss) is 100V.

What is the continuous drain current rating of the FQT7N10TF?

The maximum continuous drain current (Id) is 1.7A at case temperature (Tc).

What is the on-resistance of the FQT7N10TF?

The maximum on-resistance (Rds(on)) is 350 mOhm at a drain current of 850mA and gate-source voltage of 10V.

What is the operating temperature range of the FQT7N10TF?

The operating junction temperature range is -55°C to 150°C.

What package does the FQT7N10TF come in?

The FQT7N10TF is available in a surface-mount TO-261-4 (SOT-223-4) package.

Is the FQT7N10TF RoHS compliant?

The database indicates RoHS3 compliance, but this is unverified.

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