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FQT5P10TF P-Channel MOSFET, 100V drain-source voltage, 1A continuous drain current, 1.05 Ohm maximum on-resistance, surface mount SOT-223-4 package.
Mfr Part #:

FQT5P10TF

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET, 100V drain-source voltage, 1A continuous drain current, 1.05 Ohm maximum on-resistance, surface mount SOT-223-4 package.
✓ Total Stock: 86,757 pcs
$ Price Range: $0.31

FQT5P10TF Available from 4 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQT5P10TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQT5P10TF Description

Short technical summary and product information.

The FQT5P10TF is a P-Channel Power MOSFET manufactured by ON Semiconductor. This device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current of 1A at 25°C case temperature. The maximum on-resistance is 1.05 Ohm at 500mA drain current and 10V gate drive voltage. The gate threshold voltage is 4V maximum at 250µA drain current. Gate charge is 8.2 nC maximum at 10V, and input capacitance is 250 pF maximum at 25V drain-source voltage. Maximum gate-source voltage is ±30V. The device is housed in a TO-261-4 / TO-261AA package, which is also known as the SOT-223-4 supplier device package. It supports surface mount mounting and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2W at case temperature. This MOSFET is suitable for load switching and power management applications where a P-Channel device is required.

FQT5P10TF Quick Information

Product Type: Power MOSFET
Canonical Name: FQT5P10TF
Subcategory: P-Channel

FQT5P10TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQT5P10TF Estimated Pricing

Qty Low High
4,000+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQT5P10TF Features

  • P-Channel MOSFET, 100V drain-source voltage.
  • Continuous drain current rated at 1A.
  • Maximum on-resistance of 1.05 Ohm.
  • Surface mount SOT-223-4 package.
  • Operating temperature range -55°C to 150°C.

FQT5P10TF Applications

  • Load switching in low-power circuits.
  • DC-DC converter power stage.
  • Power management for portable devices.
  • Battery protection circuits.

FQT5P10TF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQT5P10TF?

100V

What is the continuous drain current rating?

1A at 25°C case temperature

What is the maximum on-resistance?

1.05 Ohm at 500mA drain current and 10V gate-source voltage

What package does the FQT5P10TF come in?

TO-261-4 / TO-261AA (SOT-223-4) surface mount package

What is the operating temperature range?

-55°C to 150°C junction temperature

What is the gate threshold voltage?

4V maximum at 250µA drain current

Is the device RoHS compliant?

RoHS3 Compliant (unverified)

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