| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,539 pcs
|
3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,976 pcs
|
1976 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
170 pcs
|
170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQT4N25TF is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for medium-voltage switching applications requiring up to 250V drain-source voltage and 830mA continuous drain current. The device offers a maximum on-resistance of 1.75 Ohm at Vgs = 10V and Id = 415mA, ensuring efficient power handling.
This MOSFET features a gate threshold voltage of 5V maximum at Id = 250µA, making it suitable for logic-level drive circuits. The input capacitance is 200pF typical at Vds = 25V, and the total gate charge is 5.6nC at Vgs = 10V, enabling fast switching performance.
The device is packaged in a surface-mount SOT-223-4 (TO-261AA) package, which provides good thermal dissipation with a maximum power dissipation of 2.5W. It is rated for operation over a junction temperature range of -55°C to +150°C, making it suitable for demanding environments.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.24 | $0.24 |
| 8,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 250V.
The maximum continuous drain current (Id) is 830mA at Tc.
The maximum on-resistance (Rds(on)) is 1.75 Ohm at Vgs = 10V and Id = 415mA.
The FQT4N25TF is available in a surface-mount SOT-223-4 (TO-261AA) package.
The operating junction temperature range is -55°C to +150°C.
The maximum gate threshold voltage (Vgs(th)) is 5V at Id = 250µA.
The maximum power dissipation is 2.5W at Tc.