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FQT4N20LTF The FQT4N20LTF is an N-Channel MOSFET from onsemi rated for 200V drain-source voltage and 850mA drain current. It features a maximum on-resistance of 1.35 Ohm and comes in a surface-mount SOT-223-4 package.
Mfr Part #:

FQT4N20LTF

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQT4N20LTF is an N-Channel MOSFET from onsemi rated for 200V drain-source voltage and 850mA drain current. It features a maximum on-resistance of 1.35 Ohm and comes in a surface-mount SOT-223-4 package.
✓ Total Stock: 329,965 pcs

FQT4N20LTF Available from 3 distributors

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Romaks Technologies ✓
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301,000 pcs
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301000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
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23,945 pcs
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23945 pcs On Request 1 On Request On Request 11+ On Request On Request
Optech Co.,Limited ✓
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5,020 pcs
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5020 pcs On Request 1 On Request On Request On Request On Request On Request
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FQT4N20LTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQT4N20LTF Description

Short technical summary and product information.

The FQT4N20LTF is an N-Channel enhancement-mode MOSFET manufactured by onsemi (formerly Fairchild Semiconductor). It is designed for switching and amplification applications requiring a 200V drain-to-source voltage rating and a continuous drain current of 850mA at case temperature. The device uses metal-oxide semiconductor technology and supports gate drive voltages of 5V and 10V for achieving the specified on-resistance.

 

Key electrical characteristics include a maximum on-resistance of 1.35 Ohm at a drain current of 425mA and gate-source voltage of 10V, a maximum gate threshold voltage of 2V at 250µA drain current, and a maximum gate charge of 5.2nC at 5V gate-source voltage. The input capacitance is rated at a maximum of 310pF at 25V drain-source voltage. The device can dissipate up to 2.2W at case temperature and operates over a junction temperature range of -55°C to 150°C.

 

The FQT4N20LTF is housed in a TO-261-4 (TO-261AA) package with a supplier device package designation of SOT-223-4, suitable for surface-mount assembly. The maximum gate-source voltage rating is ±20V. This component is RoHS3 compliant and REACH unaffected, with a moisture sensitivity level of 1 (unlimited).

FQT4N20LTF Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: N-Channel MOSFET, 200V, 850mA, SOT-223-4
Subcategory: Single N-Channel MOSFET

FQT4N20LTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQT4N20LTF Features

  • 200V maximum drain-source voltage rating.
  • 850mA maximum drain current at case temperature.
  • 1.35 Ohm maximum on-resistance at 10V gate drive.
  • Surface-mount SOT-223-4 package for compact designs.
  • RoHS3 compliant and REACH unaffected.

FQT4N20LTF Applications

  • Used in low-power DC-DC converter circuits.
  • Suitable for load switching in portable devices.
  • Ideal for power management in consumer electronics.
  • Used in motor control and driver circuits.

FQT4N20LTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FQT4N20LTF?

The maximum drain-to-source voltage is 200V.

What is the maximum drain current of the FQT4N20LTF?

The maximum drain current is 850mA at case temperature.

What is the on-resistance of the FQT4N20LTF?

The maximum on-resistance is 1.35 Ohm at a drain current of 425mA and gate-source voltage of 10V.

What package is the FQT4N20LTF available in?

The FQT4N20LTF is available in a TO-261-4 (TO-261AA) package with a supplier device package of SOT-223-4, for surface-mount mounting.

What is the operating temperature range of the FQT4N20LTF?

The operating junction temperature range is -55°C to 150°C.

Is the FQT4N20LTF RoHS compliant?

Yes, the FQT4N20LTF is RoHS3 compliant.

What is the maximum gate threshold voltage of the FQT4N20LTF?

The maximum gate threshold voltage is 2V at a drain current of 250µA.

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