Mfr Part #:

FQT3P20TF

P-Channel enhancement mode MOSFET with -200V drain-source voltage and -0.67A continuous drain current. Designed for switch mode power supplies and motor control applications.

✓ Total Stock: 29,056 pcs

FQT3P20TF Available from 2 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	26,056 pcs On Request	26056 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQT3P20TF Description

Short technical summary and product information.

The FQT3P20TF is a P-Channel enhancement mode power MOSFET from On Semiconductor, part of the QFET® series. It features a drain-source voltage rating of -200 V and a continuous drain current of -0.67 A at 25°C. The device has a maximum on-resistance of 2.7 Ω at Vgs = -10 V and Id = -0.335 A, with a typical gate charge of 6.0 nC. Input capacitance is typically 190 pF, and output capacitance is 45 pF. The MOSFET is avalanche rated at 150 mJ single pulse.

This MOSFET is produced using ON Semiconductor's proprietary planar stripe and DMOS technology, which reduces on-state resistance and provides superior switching performance. It is suitable for a variety of applications including switch mode power supplies, audio amplifiers, DC motor control, and variable switching power circuits.

The device is housed in a surface mount SOT-223-4 package (TO-261-4, TO-261AA) with a gull wing termination style. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5 W at 25°C case temperature. The thermal resistance from junction to ambient is 50°C/W.

FQT3P20TF Quick Information

Product Type: P-Channel MOSFET

Series: QFET

Canonical Name: FQT3P20TF P-Channel MOSFET, -200 V, -0.67 A, SOT-223-4

Subcategory: P-Channel MOSFET

FQT3P20TF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQT3P20TF Features

P-Channel MOSFET with -200V drain-source voltage.
Continuous drain current of -0.67A at 25°C.
Low on-resistance of 2.7Ω maximum at 10V gate drive.
Surface mount SOT-223-4 package.
Avalanche energy rated at 150mJ single pulse.

FQT3P20TF Applications

Used in switch mode power supplies.
Suitable for DC motor control circuits.
Ideal for audio amplifier output stages.
Applicable in variable switching power applications.

FQT3P20TF FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the FQT3P20TF?

The maximum drain-source voltage (Vdss) is -200 V at Tc = 25°C.

What package is the FQT3P20TF available in?

The device is available in a surface mount SOT-223-4 package (TO-261-4, TO-261AA).

What is the operating temperature range of the FQT3P20TF?

The operating junction temperature range is -55°C to 150°C.

Is the FQT3P20TF RoHS compliant?

It is listed as RoHS3 Compliant, but this status is unverified.

What is the maximum drain-source on-resistance of the FQT3P20TF?

The maximum on-resistance is 2.7 Ω at Vgs = -10 V, Id = -0.335 A.

What is the typical gate charge of the FQT3P20TF?

The typical gate charge is 6.0 nC, with a maximum of 8 nC at Vgs = 10 V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	-0.67 A
Drain to Source Voltage (Vdss)	-200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.0 nC ~ 8 nC
Input Capacitance (Ciss) (Max) @ Vds	190 pF ~ 250 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	2.06 Ω ~ 2.7 Ω
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	SOT-223-4
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Termination Style	Gull Wing
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	-3.0 V ~ -5.0 V