BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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301,000 pcs
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301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQT3P20 is a P-Channel enhancement mode power field effect transistor manufactured by On Semiconductor using proprietary planar stripe, DMOS technology. This advanced technology minimizes on-state resistance and provides superior switching performance, making it well-suited for high efficiency switching DC/DC converters.
Key electrical characteristics include a Drain-Source Voltage (VDSS) of -200V and a continuous Drain Current (ID) of -0.67A at 25°C. The Static Drain-Source On-Resistance (RDS(on)) is a maximum of 2.7Ω at VGS = 10V and ID = -0.335A. It also features a low gate charge (Qg) of typically 6.0 nC and low Crss of typically 7.5 pF, contributing to its fast switching performance.
The device is available in a SOT-223 package and is designed for surface mounting. The operating and storage temperature range is -55 to +150°C. Its robust design allows it to withstand high energy pulses in avalanche and commutation modes.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is -200V minimum.
The continuous drain current (ID) is -0.67A at TC = 25°C and -0.53A at TC = 70°C.
The static drain-source on-resistance (RDS(on)) is typically 2.06Ω and a maximum of 2.7Ω at VGS = -10V and ID = -0.335A.
The FQT3P20 is available in a SOT-223 surface-mount package.
The operating and storage temperature range is -55°C to +150°C.
The gate threshold voltage (VGS(th)) ranges from -3V minimum to -5V maximum at VDS = VGS and ID = -250 µA.
The maximum power dissipation is 2.5W at TC = 25°C, derated at 0.02W/°C above 25°C.