| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,617 pcs
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3617 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
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| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQT2P25TF is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for medium-voltage switching applications with a drain-source voltage rating of 250V and continuous drain current of 550mA at case temperature (Tc). The device features a maximum on-resistance of 4 Ohms at a gate-source voltage of 10V and a drain current of 275mA.
Key electrical characteristics include a maximum gate threshold voltage of 5V at 250µA drain current, a maximum gate charge of 8.5 nC at 10V, and an input capacitance of 250 pF at 25V drain-source voltage. The maximum power dissipation is 2.5W at case temperature, and the operating junction temperature range is -55°C to 150°C.
The MOSFET is housed in a surface-mount TO-261-4 / TO-261AA package, also known as SOT-223-4, which is suitable for automated assembly. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). It is commonly used in power management, load switching, and DC-DC converter circuits where P-Channel switching is required.
-55°C to 150°C junction temperature.
Surface-mount TO-261-4 / TO-261AA (SOT-223-4) package.
Yes, it is listed as RoHS3 compliant (unverified).
250V.
550mA at case temperature.
4 Ohms maximum at 275mA drain current and 10V gate-source voltage.
5V maximum at 250µA drain current.