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FQT2P25TF P-Channel MOSFET rated for 250V drain-source voltage and 550mA continuous drain current. Features 4 Ohm on-resistance at 10V gate drive and comes in a surface-mount SOT-223-4 package.
Mfr Part #:

FQT2P25TF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET rated for 250V drain-source voltage and 550mA continuous drain current. Features 4 Ohm on-resistance at 10V gate drive and comes in a surface-mount SOT-223-4 package.
Total Stock: 3,617 pcs

FQT2P25TF Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,617 pcs
3617 pcs On Request 1 On Request On Request 14+ On Request On Request

FQT2P25TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQT2P25TF Description

Short technical summary and product information.

The FQT2P25TF is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for medium-voltage switching applications with a drain-source voltage rating of 250V and continuous drain current of 550mA at case temperature (Tc). The device features a maximum on-resistance of 4 Ohms at a gate-source voltage of 10V and a drain current of 275mA.

 

Key electrical characteristics include a maximum gate threshold voltage of 5V at 250µA drain current, a maximum gate charge of 8.5 nC at 10V, and an input capacitance of 250 pF at 25V drain-source voltage. The maximum power dissipation is 2.5W at case temperature, and the operating junction temperature range is -55°C to 150°C.

 

The MOSFET is housed in a surface-mount TO-261-4 / TO-261AA package, also known as SOT-223-4, which is suitable for automated assembly. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). It is commonly used in power management, load switching, and DC-DC converter circuits where P-Channel switching is required.

FQT2P25TF Quick Information

Product Type: P-Channel MOSFET
Series: QFET
Canonical Name: FQT2P25TF P-Channel MOSFET
Subcategory: P-Channel MOSFET

FQT2P25TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

FQT2P25TF Features

  • P-Channel MOSFET with 250V drain-source voltage.
  • 550mA continuous drain current at case temperature.
  • 4 Ohm on-resistance at 10V gate drive.
  • Surface-mount SOT-223-4 package.
  • RoHS3 compliant with MSL level 1.

FQT2P25TF Applications

  • High-side load switching in power supplies.
  • DC-DC converter output stage switching.
  • Battery protection and management circuits.
  • Power management in portable electronics.

FQT2P25TF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the FQT2P25TF?

-55°C to 150°C junction temperature.

What package does the FQT2P25TF come in?

Surface-mount TO-261-4 / TO-261AA (SOT-223-4) package.

Is the FQT2P25TF RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the drain-source voltage rating?

250V.

What is the maximum drain current?

550mA at case temperature.

What is the on-resistance?

4 Ohms maximum at 275mA drain current and 10V gate-source voltage.

What is the gate threshold voltage?

5V maximum at 250µA drain current.

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