| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,932 pcs
|
8932 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQT1N80TF-WS is an N-Channel MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a drain-to-source voltage rating of 800V and a maximum drain current of 200mA at Tc. The device has a maximum drain-to-source on-resistance of 20 Ohm at Id=100mA and Vgs=10V, with a gate threshold voltage of 5V at Id=250µA.
This MOSFET is housed in a surface-mount TO-261-3 package with a supplier device package of SOT-223-3. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.1W at Tc. The gate-source voltage rating is ±30V, and the maximum gate charge is 7.2nC at Vgs=10V.
With an input capacitance of 195pF at Vds=25V, this device is suitable for high-voltage switching circuits where low gate drive requirements are important. The SOT-223-3 package provides a compact footprint for space-constrained PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.70 | $1.70 |
| 10+ | $1.07 | $1.07 |
| 50+ | $0.80 | $0.80 |
| 100+ | $0.72 | $0.72 |
| 500+ | $0.56 | $0.56 |
| 4,000+ | $0.40 | $0.40 |
| 8,000+ | $0.38 | $0.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 800V.
The maximum drain current is 200mA at Tc.
The package is TO-261-3 with a supplier device package of SOT-223-3.
The operating temperature range is -55°C to 150°C (TJ).
The maximum on-resistance is 20 Ohm at Id=100mA and Vgs=10V.
The maximum gate threshold voltage is 5V at Id=250µA.
The maximum power dissipation is 2.1W at Tc.