Mfr Part #:

FQT1N60CTF-WS

The FQT1N60CTF-WS is an N-Channel enhancement mode power MOSFET from ON Semiconductor. It features a 600V drain-source voltage, 0.2A continuous drain current, and low on-resistance of 11.5Ω.

✓ Total Stock: 13,280 pcs

$ Price Range: $1.11

FQT1N60CTF-WS Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	8,000 pcs On Request	8000 pcs	On Request	1	On Request	On Request	20+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	4,737 pcs On Request	4737 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Rayichip ✓ Non-Authorised Inventory information	543 pcs On Request	543 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQT1N60CTF-WS Description

Short technical summary and product information.

The FQT1N60CTF-WS is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor using planar stripe and DMOS technology. It is designed for applications requiring high voltage capability and low gate charge. Key electrical specifications include a maximum drain-source voltage of 600V, continuous drain current of 0.2A at 25°C (0.12A at 100°C), and a maximum on-resistance of 11.5Ω at Vgs=10V and Id=100mA. The device features a typical gate charge of 4.8nC and typical reverse transfer capacitance of 3.5pF, enabling efficient switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 33mJ. The MOSFET is housed in a surface-mount SOT-223-4 package (TO-261-4, TO-261AA) and is suitable for automated assembly. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. Operating temperature range is -55°C to 150°C. This device is suitable for switched mode power supplies, active power factor correction, and electronic lamp ballasts.

FQT1N60CTF-WS Quick Information

Product Type: Power MOSFET

Canonical Name: N-Channel MOSFET, 600V Vds, 0.2A Id, SOT-223-4

Subcategory: N-Channel MOSFET

FQT1N60CTF-WS Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FQT1N60CTF-WS Estimated Pricing

Qty	Low	High
1+	$1.11	$1.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQT1N60CTF-WS Features

600V drain-source voltage rating.
0.2A continuous drain current at 25°C.
Low on-resistance of 11.5Ω max.
Low gate charge of 4.8 nC typical.
Surface-mount SOT-223-4 package.

FQT1N60CTF-WS Applications

Suitable for switched mode power supplies.
Used in active power factor correction circuits.
Ideal for electronic lamp ballasts.
Applicable for high-voltage DC-DC converters.

FQT1N60CTF-WS FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

600V maximum.

What package does this MOSFET come in?

Surface-mount SOT-223-4 (TO-261-4, TO-261AA).

What is the operating temperature range?

-55°C to 150°C (junction).

Is this device RoHS compliant?

Yes, RoHS3 compliant and Pb-Free.

What is the maximum continuous drain current?

0.2A at Tc=25°C, 0.12A at Tc=100°C.

What is the typical gate charge?

4.8 nC at Vgs=10V.

What is the on-resistance?

11.5Ω maximum at Vgs=10V, Id=100mA; typical 9.3Ω.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	200 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	170 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.1 W
Rds On (Max) @ Id, Vgs	11.5Ohm @ 100mA, 10V
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	4 V