| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,000 pcs
|
16000 pcs | On Request | 1 | On Request | On Request | 21+10+ | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQT13N06TF is an N-Channel enhancement mode power MOSFET manufactured by onsemi using planar stripe and DMOS technology. It is rated for a maximum drain-source voltage of 60V and a continuous drain current of 2.8A at 25°C case temperature. The device offers a low on-state resistance of 140 mΩ maximum at Vgs=10V and Id=1.4A.
This MOSFET features low gate charge (typical 5.8 nC) and low reverse transfer capacitance (typical 15 pF), enabling efficient switching. It is 100% avalanche tested and can handle a single pulsed avalanche energy of 85 mJ. The recommended gate drive voltage is 10V for best performance. The device is suitable for switched mode power supplies, audio amplifiers, and DC motor control applications.
The FQT13N06TF is available in a surface-mount SOT-223-4 package (TO-261-4) with gull wing terminals. It is supplied in tape and reel packaging with 4000 units per reel. The operating junction temperature range is -55°C to 150°C. The device is Pb-free and RoHS compliant (unverified).
The FQT13N06TF is available in a surface-mount SOT-223-4 package (TO-261-4).
The operating junction temperature range is -55°C to 150°C.
The device is marked as RoHS3 compliant in the database, but this is unverified. The datasheet indicates it is Pb-free.
The maximum drain-source voltage is 60V.
The typical gate charge is 5.8 nC (maximum 7.5 nC at 10V).
The continuous drain current is 2.8A at 25°C case temperature, and pulsed drain current is 11.2A.
The maximum on-state resistance is 140 mΩ at Vgs=10V and Id=1.4A.