| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQT13N06LTF is an N-Channel MOSFET from ON Semiconductor designed for low-power switching applications. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 2.8A at case temperature. The on-resistance is 110mOhm maximum at 1.4A drain current and 10V gate drive. Gate charge is 6.4nC at 5V, and input capacitance is 350pF at 25V drain-source voltage. The threshold voltage is 2.5V maximum at 250µA. The device is rated for a maximum power dissipation of 2.1W at case temperature and operates over a junction temperature range of -55°C to 150°C. It is offered in a surface mount package compatible with TO-261-4 and TO-261AA, with supplier device package SOT-223-4. Compliance claims include RoHS3, MSL 1, and REACH unaffected, though these are unverified. The manufacturer page was not accessible; datasheet extract confirms ON Semiconductor as the current manufacturer following Fairchild integration.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.27 | $0.27 |
| 8,000+ | $0.25 | $0.25 |
| 12,000+ | $0.24 | $0.24 |
| 28,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The maximum continuous drain current is 2.8A at case temperature (Tc).
The maximum on-resistance (Rds on) is 110mOhm at 1.4A drain current and 10V gate drive.
It is surface mount in a TO-261-4 / TO-261AA package, with supplier device package SOT-223-4.
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this is unverified.
The maximum gate charge (Qg) is 6.4nC at 5V gate-source voltage.