FQPF9P25YDTU P-Channel MOSFET with 250V drain-source voltage and 6A continuous drain current. Features low on-resistance of 620mOhm and TO-220F-3 through-hole package.
Mfr Part #:

FQPF9P25YDTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET with 250V drain-source voltage and 6A continuous drain current. Features low on-resistance of 620mOhm and TO-220F-3 through-hole package.
✓ Total Stock: 5,600 pcs
$ Price Range: $0.67 - $0.82

FQPF9P25YDTU Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,600 pcs
5600 pcs On Request 1 On Request On Request On Request On Request On Request

FQPF9P25YDTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQPF9P25YDTU Description

Short technical summary and product information.

The FQPF9P25YDTU is a P-Channel MOSFET from On Semiconductor designed for medium-voltage power switching applications. It offers a drain-source voltage rating of 250V and a continuous drain current of 6A at 25°C case temperature. The device features a maximum on-resistance of 620mOhm at 3A gate drive of 10V, ensuring efficient power handling in switching circuits.

 

With a maximum gate charge of 38nC at 10V and input capacitance of 1180pF at 25V, this MOSFET provides predictable switching performance for moderate-frequency applications. The gate threshold voltage is specified at a maximum of 5V, and the device can handle gate-source voltages up to ±30V, offering flexibility in drive circuit design.

 

The FQPF9P25YDTU is housed in a TO-220F-3 full pack with formed leads, providing full isolation for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 50W at 25°C case temperature. This makes it suitable for power supplies, motor control, and other industrial applications requiring reliable P-Channel switching.

FQPF9P25YDTU Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: P-Channel MOSFET, 250V, 6A, TO-220F-3
Subcategory: Single P-Channel MOSFET

FQPF9P25YDTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF9P25YDTU Estimated Pricing

Qty Low High
800+ $0.82 $0.82
1,600+ $0.67 $0.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQPF9P25YDTU Features

  • P-Channel MOSFET with 250V drain-source rating.
  • 6A continuous drain current at 25°C case.
  • Low 620mOhm on-resistance at 10V gate drive.
  • TO-220F-3 full pack through-hole package.
  • Operates from -55°C to 150°C junction temperature.

FQPF9P25YDTU Applications

  • Used in high-side power switching circuits.
  • Suitable for DC-DC converter applications.
  • Ideal for motor control and driver stages.
  • Works in power supply and load switching.

FQPF9P25YDTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF9P25YDTU?

The maximum drain-source voltage (Vdss) is 250V.

What is the maximum continuous drain current?

The maximum continuous drain current is 6A at a case temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 620mOhm at a drain current of 3A and gate-source voltage of 10V.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

What package is the FQPF9P25YDTU available in?

It comes in a TO-220-3 Full Pack with formed leads, also known as TO-220F-3 (Y-Forming), for through-hole mounting.

What is the maximum power dissipation?

The maximum power dissipation is 50W at a case temperature of 25°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 5V at a drain current of 250µA.

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