| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,848 pcs
|
17848 pcs | On Request | 1 | On Request | On Request | 1142+ | On Request | On Request | |
|
8,777 pcs
|
8777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF9P25 is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications requiring a drain-source voltage rating of 250V and a continuous drain current of 6A at 25°C case temperature. The device features a maximum on-resistance of 620mOhm at a gate-source voltage of 10V and a drain current of 3A, ensuring efficient power handling with minimal conduction losses.
This MOSFET utilizes MOSFET (Metal Oxide) technology and offers a gate threshold voltage of 5V at 250µA drain current. The total gate charge is 38nC at 10V, and the input capacitance is 1180pF at 25V drain-source voltage, enabling moderate switching speeds suitable for many power conversion and load switching circuits. The maximum power dissipation is 50W at case temperature, and the device can operate over a junction temperature range of -55°C to 150°C.
The FQPF9P25 is supplied in a TO-220-3 Full Pack package (supplier device package TO-220F-3) with through-hole mounting, providing robust thermal performance and ease of assembly. This package is fully molded for enhanced insulation and reliability in demanding environments.
The maximum drain-source voltage (Vdss) is 250V.
The continuous drain current (Id) is 6A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 620mOhm at a gate-source voltage of 10V and drain current of 3A.
The FQPF9P25 is available in a TO-220-3 Full Pack package (supplier device package TO-220F-3) with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 5V at a drain current of 250µA.
The maximum power dissipation is 50W at case temperature (Tc).