| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,920 pcs
|
2920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF9N90CT is an N-Channel MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage rating of 900V and a continuous drain current of 8A (at Tc). The device has a maximum on-resistance of 1.4 Ohm at 4A drain current and 10V gate-source voltage. The gate threshold voltage is up to 5V at 250µA, and the gate-source voltage range is ±30V. The MOSFET is built with planar technology and offers a maximum gate charge of 58 nC at 10V. Input capacitance is 2730 pF at 25V drain-source voltage. The device is housed in a TO-220-3 Full Pack package (TO-220F-3) with through-hole mounting, suitable for power dissipation up to 68W at case temperature. The operating junction temperature range is -55°C to 150°C. This component is commonly used in power supplies, inverters, and motor control circuits requiring high voltage and moderate current.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.16 | $5.16 |
| 10+ | $3.44 | $3.44 |
| 50+ | $2.70 | $2.70 |
| 100+ | $2.46 | $2.46 |
| 500+ | $2.04 | $2.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FQPF9N90CT is available in a TO-220-3 Full Pack package (TO-220F-3) with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The RoHS compliance is marked as RoHS3 Compliant, but this is unverified according to available data.
The maximum drain-source voltage (Vdss) is 900V.
The maximum Rds(on) is 1.4 Ohm at a drain current of 4A and gate-source voltage of 10V.
The maximum gate charge (Qg) is 58 nC at a gate-source voltage of 10V.
The maximum input capacitance (Ciss) is 2730 pF at a drain-source voltage of 25V.