| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,121 pcs
|
1121 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF9N50C is an N-Channel enhancement mode power field-effect transistor produced using Fairchild Semiconductor's proprietary planar stripe DMOS technology. It features a maximum drain-to-source voltage of 500V and a continuous drain current of 9A at 25°C case temperature. The device offers a low on-state resistance of 800 mOhm maximum at a gate drive of 10V and a drain current of 4.5A.
This MOSFET is designed for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology. It delivers fast switching performance with a typical gate charge of 28 nC and low Crss of 24 pF. The device is 100% avalanche tested and capable of withstanding high energy pulses in avalanche and commutation modes.
Packaged in a TO-220-3 Full Pack (TO-220F-3) through-hole package, the FQPF9N50C has a maximum power dissipation of 44W at 25°C case temperature and an operating junction temperature range of -55°C to +150°C. The junction-to-case thermal resistance is 2.86°C/W, ensuring efficient heat transfer from the die to the case.
| Qty | Low | High |
|---|---|---|
| 216+ | $1.39 | $1.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 500 V.
At case temperature 25°C, the continuous drain current is 9 A.
The maximum on-resistance is 800 mOhm at VGS = 10 V and ID = 4.5 A.
The operating junction temperature range is -55°C to +150°C.
It is packaged in a TO-220-3 Full Pack with supplier device package TO-220F-3.
It is listed as RoHS3 Compliant (unverified).
The maximum gate threshold voltage is 4 V at VDS = VGS and ID = 250 µA.