| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,774 pcs
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2774 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The FQPF9N30 is an N-Channel enhancement mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe DMOS technology. It is designed for high efficiency switching applications such as DC/DC converters and switch mode power supplies.
Key electrical specifications include a drain-source voltage (Vdss) of 300V, continuous drain current of 6.0A at Tc=25°C (3.8A at Tc=100°C), and a pulsed drain current rating of 24A. The device features a low on-state resistance of 0.45Ω maximum at Vgs=10V and Id=3A, a typical gate charge of 17nC, and low reverse transfer capacitance of 16pF typical. It is 100% avalanche tested with a single pulsed avalanche energy rating of 420mJ.
The MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, offering a junction-to-case thermal resistance of 2.98°C/W and a maximum power dissipation of 42W at Tc=25°C. The operating junction temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 271+ | $1.11 | $1.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to +150°C.
The device is available in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified.
The maximum drain-source voltage (Vdss) is 300V.
The continuous drain current is 6.0A at Tc=25°C and 3.8A at Tc=100°C.