| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from ON Semiconductor is designed for efficient power switching applications. It features a drain-source breakdown voltage of 250V and a continuous drain current of 8.8A at case temperature Tc. The device offers a low on-resistance of 430 mOhm maximum at 4.4A drain current and 10V gate drive.
Key electrical characteristics include a gate charge of 35 nC at 10V, input capacitance of 710 pF at 25V, and a maximum gate threshold voltage of 4V at 250µA. The maximum power dissipation is 38W at Tc, and the operating junction temperature range is -55°C to 150°C.
The MOSFET is housed in a TO-220F-3 through-hole package, suitable for manual or wave soldering. It is a single N-Channel device with a gate-source voltage rating of ±30V. This component is ideal for use in power supplies, DC-DC converters, and other general-purpose switching circuits.
| Qty | Low | High |
|---|---|---|
| 800+ | $0.63 | $0.63 |
| 1,600+ | $0.43 | $0.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
250V.
8.8A at case temperature Tc.
-55°C to 150°C (junction temperature).
TO-220F-3 through-hole package.
4V maximum at 250µA drain current.
38W at case temperature Tc.