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FQPF9N25C N-Channel MOSFET with 250V drain-source breakdown voltage and 8.8A continuous drain current. Housed in a TO-220F-3 through-hole package.
Mfr Part #:

FQPF9N25C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 250V drain-source breakdown voltage and 8.8A continuous drain current. Housed in a TO-220F-3 through-hole package.
✓ Total Stock: 50 pcs

FQPF9N25C Available from 1 distributor

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✓ Non-Authorised
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Bristol Electronics ✓
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50 pcs
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FQPF9N25C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF9N25C Description

Short technical summary and product information.

The FQPF9N25C is an N-Channel MOSFET from ON Semiconductor designed for medium-voltage power switching applications. It features a drain-source breakdown voltage of 250V and a continuous drain current of 8.8A at case temperature (Tc). The device offers a maximum drain-source on-resistance of 430 mOhm at 4.4A drain current and 10V gate drive, ensuring efficient conduction.

 

Key electrical characteristics include a maximum gate charge of 35 nC at 10V, input capacitance of 710 pF at 25V drain-source, and a gate threshold voltage of 4V at 250µA. The maximum gate-source voltage rating is ±30V, with a recommended drive voltage of 10V for optimal Rds(on). Power dissipation is rated at 38W at case temperature.

 

The MOSFET is packaged in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for PCB mounting with standard lead spacing. It operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited).

 

Typical applications include power supply circuits, DC-DC converters, motor control, and high-voltage inverter systems where reliable switching and low conduction losses are required.

FQPF9N25C Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: N-Channel MOSFET, 250V, 8.8A, TO-220F-3
Subcategory: N-Channel MOSFET

FQPF9N25C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF9N25C Features

  • N-Channel MOSFET with 250V drain-source voltage.
  • 8.8A continuous drain current rating.
  • Low on-resistance of 430 mOhm maximum.
  • Through-hole TO-220F-3 package.
  • RoHS3 compliant and REACH unaffected.

FQPF9N25C Applications

  • Suitable for power supply switching circuits.
  • Used in motor control applications.
  • Ideal for DC-DC converter designs.
  • Applicable in high-voltage inverter systems.
  • Can be used in lighting ballasts.

FQPF9N25C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQPF9N25C?

250V.

What package does the FQPF9N25C come in?

TO-220-3 Full Pack (TO-220F-3).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FQPF9N25C RoHS compliant?

Yes, RoHS3 compliant.

What is the maximum gate threshold voltage?

4V at 250µA drain current.

What is the maximum drain-source on-resistance?

430 mOhm at 4.4A drain current and 10V gate-source voltage.

What is the maximum gate charge?

35 nC at 10V gate-source voltage.

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