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FQPF8N80CYDTU N-Channel MOSFET rated for 800V drain-source voltage and 8A continuous drain current. Features a maximum on-resistance of 1.55 Ohm at 10V gate drive.
Mfr Part #:

FQPF8N80CYDTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 800V drain-source voltage and 8A continuous drain current. Features a maximum on-resistance of 1.55 Ohm at 10V gate drive.
✓ Total Stock: 3,800 pcs
$ Price Range: $1.64

FQPF8N80CYDTU Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
3,800 pcs
On Request
3800 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQPF8N80CYDTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQPF8N80CYDTU Description

Short technical summary and product information.

This N-Channel MOSFET is designed for high-voltage switching applications requiring up to 800V drain-source voltage and 8A continuous current. The device features a low on-resistance of 1.55 Ohm maximum at 10V gate drive, enabling efficient power handling. With a gate charge of 45 nC and input capacitance of 2050 pF, it offers moderate switching performance. The TO-220F-3 full pack package with formed leads provides through-hole mounting and an isolated mounting surface. Operating temperature range from -55°C to 150°C allows use in demanding environments.

FQPF8N80CYDTU Quick Information

Product Type: MOSFET Transistor
Canonical Name: N-Channel MOSFET Transistor
Subcategory: Single MOSFET

FQPF8N80CYDTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQPF8N80CYDTU Estimated Pricing

Qty Low High
183+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQPF8N80CYDTU Features

  • N-Channel MOSFET rated for 800V drain-source.
  • Continuous drain current up to 8A.
  • Low on-resistance of 1.55 Ohm maximum.
  • Gate charge of 45 nC for efficient switching.
  • Through-hole TO-220F-3 package with formed leads.

FQPF8N80CYDTU Applications

  • Suitable for high-voltage switching power supplies.
  • Used in motor control and inverter circuits.
  • Ideal for power factor correction stages.

FQPF8N80CYDTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

800 V maximum.

What is the continuous drain current?

8 A at case temperature.

What is the on-resistance?

1.55 Ohm maximum at 4A, 10V.

What is the operating temperature range?

-55°C to 150°C junction.

What is the package type?

TO-220-3 Full Pack with formed leads (TO-220F-3).

Is it RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate threshold voltage?

5 V maximum at 250 µA.

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