| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQPF8N80C from Freescale Semiconductor is an 800V N-Channel enhancement mode power MOSFET utilizing proprietary planar stripe, DMOS technology. This advanced technology is optimized to minimize on-state resistance, provide excellent switching performance, and withstand high energy pulses in avalanche and commutation modes.
Key electrical specifications include a continuous drain current of 8A at 25°C, a maximum continuous drain current of 5.1A at 100°C, and a pulsed drain current of 32A. The breakdown voltage is rated at 800V, with a gate-source voltage range of ±30V. The typical on-resistance (RDS(on)) is 1.55Ω at VGS = 10V, and the gate threshold voltage is typically 3V.
This MOSFET is suitable for high efficiency switch mode power supplies. It is packaged in a TO-220-3 through-hole mount configuration. The operating temperature range is -55°C to +150°C.
Additional features include low gate charge (typical 35 nC), low Crss (typical 13 pF), fast switching, 100% avalanche tested, and improved dv/dt capability. The power dissipation is rated at 59W at 25°C, with a derating of 0.48W/°C above that temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 800V.
The continuous drain current is 8A at 25°C and 5.1A at 100°C.
The maximum on-resistance is 1.55 Ohms at VGS = 10V.
The FQPF8N80C is supplied in a TO-220-3 package.
The operating temperature range is -55°C to +150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.