| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,700 pcs
|
1700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQPF8N80C is an N-channel power MOSFET manufactured by On Semiconductor. It is designed for high-voltage power switching applications. The device is rated for a drain-to-source voltage of 800 V and a continuous drain current of 8 A at case temperature.
The MOSFET features a maximum on-resistance of 1.55 Ω at Vgs = 10 V and Id = 4 A. The gate threshold voltage is a maximum of 5 V at 250 µA, and the gate-source voltage can range up to ±30 V. Total gate charge is 45 nC at Vgs = 10 V, and input capacitance is 2050 pF at Vds = 25 V, facilitating efficient gate drive and switching performance.
The device is offered in a TO-220-3 Full Pack package (TO-220F-3) with through-hole mounting. Maximum power dissipation is 59 W at case temperature, and the operating junction temperature range is -55°C to 150°C. The FQPF8N80C is listed as RoHS3 compliant and has an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 200+ | $3.38 | $3.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 800 V.
The FQPF8N80C is offered in a TO-220-3 Full Pack package, with supplier device package TO-220F-3.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant in the database, but this status is unverified.
The continuous drain current is 8 A at case temperature.
The maximum on-resistance is 1.55 Ω at Vgs = 10 V and Id = 4 A.
The total gate charge is 45 nC at Vgs = 10 V.